Browsing by author "Mercha, Abdelkarim"
Now showing items 41-60 of 264
-
Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies
Huynh Bao, Trong; Yakimets, Dmitry; Ryckaert, Julien; Ciofi, Ivan; Baert, Rogier; Veloso, Anabela; Boemmels, Juergen; Collaert, Nadine; Roussel, Philippe; Demuynck, Steven; Raghavan, Praveen; Mercha, Abdelkarim; Tokei, Zsolt; Verkest, Diederik; Thean, Aaron; Wambacq, Piet (2014-09) -
Circuit and product level assessment of emerging fully depleted channel devices: FinFET and UTBOX-SOI
Badaroglu, Mustafa; Dehan, Morin; Garcia Bardon, Marie; Miranda Corbalan, Miguel; Zuber, Paul; Schuddinck, Pieter; Mallik, Arindam; Mercha, Abdelkarim; Verkest, Diederik (2012) -
Class 3 HBM and class C MM ESD protected 5.5 GHz LNA in 90 nm RF CMOS using above-IC inductors
Thijs, Steven; Linten, Dimitri; Mahadeva Iyer, Natarajan; Jeamsaksiri,; Mercha, Abdelkarim; Ramos, Javier; Sun, Xiao; Carchon, Geert; Soussan, Philippe; Wambacq, Piet; Decoutere, Stefaan; Groeseneken, Guido (2005) -
CMOS compatible anodization process for low cost high density capacitors
Detalle, Mikael; Rakowski, Michal; Potoms, Goedele; Mercha, Abdelkarim; de Potter de ten Broeck, Muriel; Phommahaxay, Alain; Sabuncuoglu Tezcan, Deniz; Soussan, Philippe (2010) -
CMOS compatible anodization process for low cost high density capacitors
Detalle, Mikael; Rakowski, Michal; Potoms, Goedele; Mercha, Abdelkarim; de Potter de ten Broeck, Muriel; Phommahaxay, Alain; Sabuncuoglu Tezcan, Deniz; Soussan, Philippe (2010) -
CMOS-based single-package solutions for wireless communications
Wambacq, Piet; Linten, Dimitri; Soens, Charlotte; Badaroglu, Mustafa; Ryckaert, Julien; Van der Plas, Geert; Carchon, Geert; Mercha, Abdelkarim; Donnay, Stephane (2005) -
Comparative study of a fully differential op amp in FinFET and planar technologies
Morrison, Sebastien; Parvais, Bertrand; Vandersteen, Gerd; Miyaguchi, Kenichi; Mercha, Abdelkarim; Wambacq, Piet (2014) -
Comparison between 0.13 μm partially depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Pavanello, M.A.; Martino, J.; Mercha, Abdelkarim; Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; van Meer, Hans; De Meyer, Kristin (2002) -
Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performances
Mercha, Abdelkarim; Van der Plas, Geert; Moroz, V.; De Wolf, Ingrid; Asimakopoulos, Panagiotis; Minas, Nikolaos; Domae, Shinichi; Perry, Dan; Choi, M.; Redolfi, Augusto; Okoro, Chukwudi; Yang, Yu; Van Olmen, Jan; Thangaraju, Sarasvathi; Sabuncuoglu Tezcan, Deniz; Soussan, Philippe; Cho, Jong Hoon; Yakovlev, A.; Marchal, Pol; Travaly, Youssef; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2010) -
Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology
Guo, Wei; Moroz, Victor; Van der Plas, Geert; Choi, M.; Redolfi, Augusto; Smith, L.; Eneman, Geert; Van Huylenbroeck, Stefaan; Su, P.D.; Ivankovic, Andrej; De Wachter, Bart; Debusschere, Ingrid; Croes, Kris; De Wolf, Ingrid; Mercha, Abdelkarim; Beyer, Gerald; Swinnen, Bart; Beyne, Eric (2013) -
Correlation between the l/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal-oxide-semiconductor field-effect transistors
Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor; Young, E. (2004) -
Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs
Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor; Lukyanchikova, N.; Garbar, N. (2004) -
Cumulated charging mechanisms at gate processing in high-kappa first planar NMOS devices
Hiblot, Gaspard; Parihar, Narendra; Dupuy, Emmanuel; Mannaert, Geert; Baudot, Sylvain; Kaczer, Ben; De Heyn, Vincent; Mercha, Abdelkarim (2020) -
DC and low frequency noise performances of SOI p-FinFETs at very low temperature
Achour, Hakim; Talmat, Rachida; Cretu, Bogdan; Routoure, Jean-Marc; Benfdila, A.; Carin, Regis; Collaert, Nadine; Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor (2013) -
DC and noise performances of SOI FinFETs at very low temperature
Achour, H.; Talmat, R.; Cretu, B.; Routoure, J.M.; Benfdila, A.; Carin, R.; Collaert, Nadine; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2012) -
DC and RF characteristics of a 60-nm FinFET over a wide temperature range
Tinoco, Julio; Parvais, Bertrand; Mercha, Abdelkarim; Decoutere, Stefaan; Raskin, Jean-Pierre (2008) -
Degradation of deep submicron partially depleted SOI CMOS transistors under MeV proton irradiation
Simoen, Eddy; Rafi, Joan Marc; Mercha, Abdelkarim; De Meyer, Kristin; Claeys, Cor; Kokkoris, M.; Kossionides, E.; Fanourakis, G.; Mohammadzadeh, A. (2003) -
Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs in accumulation mode operation
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
Hayama, K.; Takakura, K.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor; Rafi, J.M.; Kokkoris, M. (2004) -
Degradation of the electrical performance and floating body effects in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Matsuyama, K.; Hayama, K.; Takakura, K.; Yoneoka, M.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005)