Publication:
Parasitic side channel formation due to ion implantation isolation of GaN HEMT
Loading...
Journal
Abstract
Description
Statistics
Downloads
402 since deposited on 2023-01-14
46last month
21last week
Acq. date: 2026-03-01
Views
1232 since deposited on 2023-01-14
Acq. date: 2026-03-01
Citations
Statistics
Downloads
402 since deposited on 2023-01-14
46last month
21last week
Acq. date: 2026-03-01
Views
1232 since deposited on 2023-01-14
Acq. date: 2026-03-01
Citations