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Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate
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Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate
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Date
2014
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Shih-Hung
;
Linten, Dimitri
;
Scholz, Mirko
;
Hellings, Geert
;
Boschke, Roman
;
Groeseneken, Guido
;
Huang, S.-H.
;
Ker, M.-D.
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1868
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Acq. date: 2025-12-09
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Views
1868
since deposited on 2021-10-22
1
last month
Acq. date: 2025-12-09
Citations