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A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%
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1952 since deposited on 2021-10-27
2last month
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Acq. date: 2025-12-11
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Views
1952 since deposited on 2021-10-27
2last month
1last week
Acq. date: 2025-12-11
Citations