Publication:
High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
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1966 since deposited on 2021-10-19
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Acq. date: 2026-04-27
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Statistics
Views
1966 since deposited on 2021-10-19
1last month
1last week
Acq. date: 2026-04-27
Citations