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Impact of Hf-precursor choice on scaling and performance of high-k gate dielectrics

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dc.contributor.authorMaes, Jan
dc.contributor.authorFedorenko, Yanina
dc.contributor.authorDelabie, Annelies
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSwerts, Johan
dc.contributor.authorNyns, Laura
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWang, C.
dc.contributor.authorWilk, G.
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-16T17:45:30Z
dc.date.available2021-10-16T17:45:30Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12537
dc.source.beginpage59
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics 5
dc.source.conferencedate7/10/2007
dc.source.conferencelocationWashington, DC USA
dc.source.endpage72
dc.title

Impact of Hf-precursor choice on scaling and performance of high-k gate dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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