Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior

He, Liang; Zhao, Pan; Liu, Jiahao; Su, Yahui; Chen, Hua; Jia, Xiaofei; Arimura, Hiroaki; Mitard, Jerome; Witters, Liesbeth; Horiguchi, Naoto; Collaert, Nadine; Claeys, Cor; Simoen, Eddy

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Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior

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2019-12

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IEEE Transactions on Electron Devices

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1894 since deposited on 2021-10-27

Acq. date: 2026-01-26

Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior

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