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Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
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1 since deposited on 2021-10-23
Acq. date: 2025-12-11
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2023 since deposited on 2021-10-23
Acq. date: 2025-12-11
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1 since deposited on 2021-10-23
Acq. date: 2025-12-11
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2023 since deposited on 2021-10-23
Acq. date: 2025-12-11
Citations