Publication:
Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
Date
Loading...
Files
Journal
Abstract
Description
Metrics
Views
1967 since deposited on 2021-10-19
Acq. date: 2025-12-11
Citations
Metrics
Views
1967 since deposited on 2021-10-19
Acq. date: 2025-12-11
Citations