High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

Yoshida, Shinichi; Lin, Dennis; Vais, Abhitosh; Alian, AliReza; Franco, Jacopo; El Kazzi, Salim; Mols, Yves; Miyanami, Yuki; Nakazawa, M.; Collaert, Nadine; Watanabe, H.; Thean, Aaron

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High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

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2017

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IEEE Journal of the Electron Devices Society

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Acq. date: 2026-09-14

High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

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