Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Li, Kan; Luo, Xuyi; Rony, M. W.; Gorchichko, Mariia; Hiblot, Gaspard; Van Huylenbroeck, Stefaan; Jourdain, Anne; Alles, Michael L.; Reed, Robert A.; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.

doi:10.1109/TNS.2023.3239844

Publication:

Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Date

2023

Journal article

https://doi.org/10.1109/TNS.2023.3239844

Simple item page Full metadata Statistics

Files

Published version 5.87 MB

Author(s)

;

;

;

;

;

Van Huylenbroeck, Stefaan

;

;

;

;

;

;

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Metrics

1 since deposited on 2023-05-27

Acq. date: 2025-12-10

1266 since deposited on 2023-05-27

3last month

1last week

Acq. date: 2025-12-09

Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Date

Files

Author(s)

Journal

Abstract

Description

Metrics

Downloads

Views

Citations

Metrics

Downloads

Views

Citations