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Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
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Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
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Date
2023
Journal article
https://doi.org/10.1016/j.sse.2022.108576
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Veloso, Anabela
;
Matagne, Philippe
;
Claeys, Cor
Journal
SOLID-STATE ELECTRONICS
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since deposited on 2023-07-27
Acq. date: 2025-12-15
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876
since deposited on 2023-07-27
Acq. date: 2025-12-15
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Downloads
1
since deposited on 2023-07-27
Acq. date: 2025-12-15
Views
876
since deposited on 2023-07-27
Acq. date: 2025-12-15
Citations