Publication:

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Date

2023
Journal article
https://doi.org/10.1016/j.sse.2022.108576
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.date.accessioned2024-03-12T10:12:01Z
dc.date.available2023-07-27T17:30:37Z
dc.date.available2024-03-12T10:12:01Z
dc.date.embargo2026-02-01
dc.date.issued2023
dc.identifier.doi10.1016/j.sse.2022.108576
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42212
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 108576
dc.source.endpageN/A
dc.source.issueFebruary
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages6
dc.source.volume200
dc.title

Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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