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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

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1840 since deposited on 2021-10-19
1last month
Acq. date: 2026-09-18

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Views

1840 since deposited on 2021-10-19
1last month
Acq. date: 2026-09-18

Citations