Publication:

Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics

 
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorGroven, Benjamin
dc.contributor.authorSerron, Jill
dc.contributor.authorWu, Xiangyu
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorMinj, Albert
dc.contributor.authorSergeant, Stefanie
dc.contributor.authorHan, Han
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorLin, Dennis
dc.contributor.authorBrems, Steven
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorMorin, Pierre
dc.contributor.authorRadu, Iuliana
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorSerron, Jill
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorMinj, Albert
dc.contributor.imecauthorSergeant, Stefanie
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBrems, Steven
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.contributor.orcidimecMehta, Ankit Nalin::0000-0002-2169-940X
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.contributor.orcidimecSergeant, Stefanie::0000-0001-9923-0903
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecSerron, Jill::0000-0002-9101-8139
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecBrems, Steven::0000-0002-0282-8528
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecAsselberghs, Inge::0000-0001-8371-3222
dc.date.accessioned2022-03-02T15:05:20Z
dc.date.available2022-03-02T15:05:20Z
dc.date.issued2021
dc.identifier.doi10.1021/acsnano.0c07761
dc.identifier.issn1936-0851
dc.identifier.pmidMEDLINE:34042437
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39247
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage9482
dc.source.endpage9494
dc.source.issue6
dc.source.journalACS NANO
dc.source.numberofpages13
dc.source.volume15
dc.subject.keywordsCHEMICAL-VAPOR-DEPOSITION
dc.subject.keywordsLARGE-AREA SYNTHESIS
dc.subject.keywordsSURFACE-MORPHOLOGY
dc.subject.keywordsWSE2
dc.subject.keywordsLAYERS
dc.subject.keywordsCRYSTALLINE
dc.subject.keywordsNUCLEATION
dc.subject.keywordsGROWTH
dc.subject.keywordsMONOLAYERS
dc.subject.keywordsSUBSTRATE
dc.title

Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics

dc.typeJournal article
dspace.entity.typePublication
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