Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)

dc.contributor.author	Sahhaf, Sahar
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Cho, Moon Ju
dc.contributor.author	De Brabanter, K.
dc.contributor.author	Roussel, Philippe
dc.contributor.author	Zahid, Mohammed
dc.contributor.author	Groeseneken, Guido
dc.contributor.imecauthor	Sahhaf, Sahar
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Roussel, Philippe
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.orcidimec	Roussel, Philippe::0000-0002-0402-8225
dc.date.accessioned	2021-10-18T21:08:37Z
dc.date.available	2021-10-18T21:08:37Z
dc.date.embargo	9999-12-31
dc.date.issued	2010-12
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17927
dc.source.beginpage	2614
dc.source.endpage	2619
dc.source.issue	12
dc.source.journal	Microelectronic Engineering
dc.source.volume	87
dc.title	Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)
dc.type	Journal article
dspace.entity.type	Publication
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