Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Wynocker, Isabella R.; Zhang, En Xia; Reed, Robert A.; Schrimpf, Ronald D.; Arreghini, Antonio; Bastos, Joao; van den Bosch, Geert; Linten, Dimitri; Fleetwood, Daniel M.

doi:10.1109/tns.2024.3431436

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Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

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2024

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https://doi.org/10.1109/tns.2024.3431436

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Wynocker, Isabella R.

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE

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Acq. date: 2026-08-06

422 since deposited on 2024-09-21

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Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

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