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Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide
Publication:
Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide
Date
2024
Journal article
https://doi.org/10.1109/TNS.2024.3431436
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1.8 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wynocker, Isabella R.
;
Zhang, En Xia
;
Reed, Robert A.
;
Schrimpf, Ronald D.
;
Arreghini, Antonio
;
Bastos, Joao
;
van den Bosch, Geert
;
Linten, Dimitri
;
Fleetwood, Daniel M.
Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Abstract
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111
since deposited on 2024-09-21
Acq. date: 2025-10-23
Views
415
since deposited on 2024-09-21
Acq. date: 2025-10-23
Citations
Metrics
Downloads
111
since deposited on 2024-09-21
Acq. date: 2025-10-23
Views
415
since deposited on 2024-09-21
Acq. date: 2025-10-23
Citations