Publication:

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Date

2024
Journal article
https://doi.org/10.1109/TNS.2024.3431436
Simple item page Full metadata Statistics
 
dc.contributor.authorWynocker, Isabella R.
dc.contributor.authorZhang, En Xia
dc.contributor.authorReed, Robert A.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorArreghini, Antonio
dc.contributor.authorBastos, Joao
dc.contributor.authorvan den Bosch, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorvan den Bosch, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorBastos, Joao
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.date.accessioned2025-01-23T15:34:13Z
dc.date.available2024-09-21T17:57:49Z
dc.date.available2025-01-23T15:34:13Z
dc.date.embargo2024-07-19
dc.date.issued2024
dc.description.wosFundingTextThis work was supported in part by the Defense Threat Reduction Agency through its Basic Research Program and in part by the Air Force Office of Scientific Research under Grant FA9550-17-1-0046 and Grant FA9550-22-1-0012. The work of Isabella R. Wynocker was supported by the SyBBURE Searle Undergraduate Research Program and SCALE Workforce Development Program.
dc.identifier.doi10.1109/TNS.2024.3431436
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44557
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage1789
dc.source.endpage1797
dc.source.issue8
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages9
dc.source.volume71
dc.subject.keywords1/F NOISE
dc.subject.keywordsUNIFIED MODEL
dc.subject.keywordsTRAPS
dc.subject.keywordsTECHNOLOGY
dc.subject.keywordsIMPACT
dc.title

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
Random_Telegraph_Noise_and_Radiation_Response_of_80_nm_Vertical_Charge-Trapping_NAND_Flash_Memory_Devices_With_SiON_Tunneling_Oxide.pdf
Size:
1.8 MB
Format:
Adobe Portable Document Format
Description:
Published version
Download
Publication available in collections:
Articles