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Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N-2 remote-plasma treatment
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Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N-2 remote-plasma treatment
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Date
2021
Journal article
https://doi.org/10.1063/5.0037378
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6.18 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Huang, P.
;
Luc, Q. H.
;
Chang, E. Y.
;
Sibaja-Hernandez, Arturo
;
Hsu, C. W.
;
Wu, J. Y.
;
Ko, H. L.
;
Tran, N. A.
;
Collaert, Nadine
Journal
AIP ADVANCES
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131
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1822
since deposited on 2021-11-02
Acq. date: 2025-12-15
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Downloads
131
since deposited on 2021-11-02
24
last month
5
last week
Acq. date: 2025-12-15
Views
1822
since deposited on 2021-11-02
Acq. date: 2025-12-15
Citations