Publication:

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N-2 remote-plasma treatment

Date

2021
Journal article
https://doi.org/10.1063/5.0037378
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dc.contributor.authorHuang, P.
dc.contributor.authorLuc, Q. H.
dc.contributor.authorChang, E. Y.
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorHsu, C. W.
dc.contributor.authorWu, J. Y.
dc.contributor.authorKo, H. L.
dc.contributor.authorTran, N. A.
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidextChang, E. Y.::0000-0003-1616-5240
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-12-10T10:40:27Z
dc.date.available2021-11-02T16:04:05Z
dc.date.available2021-12-10T10:40:27Z
dc.date.issued2021
dc.identifier.doi10.1063/5.0037378
dc.identifier.issn2158-3226
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38109
dc.publisherAMER INST PHYSICS
dc.source.beginpage015050
dc.source.issue1
dc.source.journalAIP ADVANCES
dc.source.numberofpages8
dc.source.volume11
dc.title

Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N-2 remote-plasma treatment

dc.typeJournal article
dspace.entity.typePublication
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