Publication:

Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

Date

2020
Proceedings Paper
https://doi.org/10.1109/IEDM13553.2020.9372054
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorVandooren, Anne
dc.contributor.authorKimura, Yosuke
dc.contributor.authorNyns, Laura
dc.contributor.authorWu, Zhicheng
dc.contributor.authorEl-Sayed, A-M
dc.contributor.authorJech, M.
dc.contributor.authorWaldhoer, D.
dc.contributor.authorClaes, Dieter
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorAfanas'ev, V.
dc.contributor.authorStesmans, A.
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGrasser, T.
dc.contributor.authorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorKimura, Yosuke
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorClaes, Dieter
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecde Marneffe, Jean-Francois::0000-0001-5178-6670
dc.contributor.orcidimecKimura, Yosuke::0000-0002-9098-0414
dc.contributor.orcidimecClaes, Dieter::0000-0002-0356-0973
dc.contributor.orcidimecArimura, Hiroaki::0000-0002-3138-708X
dc.date.accessioned2021-12-16T11:32:46Z
dc.date.available2021-12-06T02:06:35Z
dc.date.available2021-12-16T11:32:46Z
dc.date.embargo2020-12-31
dc.date.issued2020
dc.identifier.doi10.1109/IEDM13553.2020.9372054
dc.identifier.eisbn978-1-7281-8888-1
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38549
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.journalna
dc.source.numberofpages4
dc.title

Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

dc.typeProceedings paper
dspace.entity.typePublication
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