Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias
Publication:
Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias
Date
2004
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lukyanchikova, N.
;
Garbar, N.
;
Smolanka, A.
;
Simoen, Eddy
;
Claeys, Cor
Journal
IEEE Electron Device Letters
Abstract
Description
Metrics
Views
1972
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1972
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations