Publication:
High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor
Date
| dc.contributor.author | Popovici, Mihaela Ioana | |
| dc.contributor.author | Belmonte, Attilio | |
| dc.contributor.author | Oh, Hyungrock | |
| dc.contributor.author | Potoms, Goedele | |
| dc.contributor.author | Meersschaut, Johan | |
| dc.contributor.author | Richard, Olivier | |
| dc.contributor.author | Hody, Hubert | |
| dc.contributor.author | Van Elshocht, Sven | |
| dc.contributor.author | Delhougne, Romain | |
| dc.contributor.author | Goux, Ludovic | |
| dc.contributor.author | Kar, Gouri Sankar | |
| dc.contributor.imecauthor | Popovici, Mihaela Ioana | |
| dc.contributor.imecauthor | Belmonte, Attilio | |
| dc.contributor.imecauthor | Oh, Hyungrock | |
| dc.contributor.imecauthor | Potoms, Goedele | |
| dc.contributor.imecauthor | Meersschaut, Johan | |
| dc.contributor.imecauthor | Richard, Olivier | |
| dc.contributor.imecauthor | Hody, Hubert | |
| dc.contributor.imecauthor | Van Elshocht, Sven | |
| dc.contributor.imecauthor | Delhougne, Romain | |
| dc.contributor.imecauthor | Goux, Ludovic | |
| dc.contributor.imecauthor | Kar, Gouri Sankar | |
| dc.contributor.orcidimec | Oh, Hyungrock::0000-0001-5244-5755 | |
| dc.contributor.orcidimec | Meersschaut, Johan::0000-0003-2467-1784 | |
| dc.contributor.orcidimec | Richard, Olivier::0000-0002-3994-8021 | |
| dc.contributor.orcidimec | Van Elshocht, Sven::0000-0002-6512-1909 | |
| dc.contributor.orcidimec | Goux, Ludovic::0000-0002-1276-2278 | |
| dc.date.accessioned | 2021-10-26T01:27:30Z | |
| dc.date.available | 2021-10-26T01:27:30Z | |
| dc.date.issued | 2018 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/31553 | |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8614673 | |
| dc.source.beginpage | 51 | |
| dc.source.conference | IEEE International Electron Devices Meeting - IEDM | |
| dc.source.conferencedate | 1/12/2018 | |
| dc.source.conferencelocation | San Francisco, CA USA | |
| dc.source.endpage | 54 | |
| dc.title | High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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