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Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
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Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nakashima, Toshiyuki
;
Idemoto, Tatsuya
;
Tsunoda, Isao
;
Takakura, Kenichiro
;
Yoneoka, Masashi
;
Ohyama, Hidenori
;
Yoshino, Kenji
;
Simoen, Eddy
;
Claeys, Cor
Journal
Materials Science Forum
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2029
since deposited on 2021-10-20
Acq. date: 2025-12-12
Citations
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Views
2029
since deposited on 2021-10-20
Acq. date: 2025-12-12
Citations