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Modeling the effect of charges in the back side passivation layer on through silicon via (TSV) capacitance after wafer thinning
Publication:
Modeling the effect of charges in the back side passivation layer on through silicon via (TSV) capacitance after wafer thinning
Date
2015
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rack, Martin
;
Stucchi, Michele
;
Sun, Xiao
;
Roda Neve, Cesar
;
Van der Plas, Geert
;
Beyne, Eric
;
Absil, Philippe
;
Raskin, J-P
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1954
since deposited on 2021-10-22
428
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1954
since deposited on 2021-10-22
428
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations