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Study of deposition behavior of thermal/plasma-enhanced chemical vapor deposition (CVD/PECVD) of manganese on porous SiCOH low-k dielectric materials for copper diffusion barrier application in advanced interconnect technology

Date

2012
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dc.contributor.authorJourdan, Nicolas
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorVereecke, Guy
dc.contributor.authorConard, Thierry
dc.contributor.authorWilson, Chris
dc.contributor.authorAblett, James
dc.contributor.authorFonda, Emiliano
dc.contributor.authorGeypen, Jef
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorTokei, Zsolt
dc.contributor.imecauthorJourdan, Nicolas
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVereecke, Guy
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorWilson, Chris
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-20T11:57:34Z
dc.date.available2021-10-20T11:57:34Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20879
dc.source.beginpageC4.2
dc.source.conferenceMRS Spring Symposium C: Interconnect Challenges for CMOS Technology
dc.source.conferencedate9/04/2012
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Study of deposition behavior of thermal/plasma-enhanced chemical vapor deposition (CVD/PECVD) of manganese on porous SiCOH low-k dielectric materials for copper diffusion barrier application in advanced interconnect technology

dc.typeMeeting abstract
dspace.entity.typePublication
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