Browsing imec Publications by author "Ma, Jigang"
Now showing items 1-8 of 8
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A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs
Ma, Jigang; Zhang, Wei Dong; Zhang, Jian Fu; Benbakhti, Brahim; Li, Zhigang; Mitard, Jerome; Arimura, Hiroaki (2016) -
Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>10²) on/off window, tunable μA-range switching current and excellent variability
Govoreanu, Bogdan; Di Piazza, Luca; Ma, Jigang; Conard, Thierry; Vanleenhove, Anja; Belmonte, Attilio; Radisic, Dunja; Popovici, Mihaela Ioana; Velea, Alin; Redolfi, Augusto; Richard, Olivier; Clima, Sergiu; Adelmann, Christoph; Bender, Hugo; Jurczak, Gosia (2016) -
Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement
Ma, Jigang; Chai, Zheng; Zhang, Weidong; Govoreanu, Bogdan; Zhang, Jiang F.; Ji, Z.; Benbakhti, B.; Groeseneken, Guido; Jurczak, Malgorzata (2016) -
Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, J. F.; Ji, Z.; Benbakhti, Brahim; Govoreanu, Bogdan; Simoen, Eddy; Goux, Ludovic; Belmonte, Attilio; Degraeve, Robin; Kar, Gouri Sankar; Jurczak, Gosia (2018) -
Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals
Chai, Zheng; Ma, Jigang; Zhang, Weidong; Govoreanu, Bogdan; Ji, Zhigang; Zhang, Jian Fu; Jurczak, Gosia (2017) -
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
Gao, Rui; Manut, Azrif B.; Ji, Zhigang; Ma, Jigang; Duan, Meng; Zhang, Jian Fu; Franco, Jacopo; Hatta, Sharifah Wan Muhamad; Zhang, Wei Dong; Kaczer, Ben; Vigar, David; Linten, Dimitri; Groeseneken, Guido (2017) -
RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism
Chai, Zheng; Ma, Jigang; Zhang, Weidong; Govoreanu, Bogdan; Simoen, Eddy; Zhang, Jiang; Li, Ziqhiang; Gao, R.; Groeseneken, Guido; Jurczak, Gosia (2016) -
TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
Ma, Jigang; Chai, Zheng; Zhang, Wei Dong; Zhang, Jian Fu; Marsland, John; Govoreanu, Bogdan; Degraeve, Robin; Goux, Ludovic; Kar, Gouri Sankar (2019)