Browsing imec Publications by imec author "9a0992aa1d596dd9c5eeff88e3056d5c55b11fac"
Now showing items 1-11 of 11
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1T-1C Dynamic Random Access Memory status, challenges and perspective
Spessot, Alessio; Oh, Hyungrock (2020) -
Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
Belmonte, Attilio; Oh, Hyungrock; Rassoul, Nouredine; Donadio, Gabriele Luca; Mitard, Jerome; Dekkers, Harold; Delhougne, Romain; Subhechha, Subhali; Vaisman Chasin, Adrian; van Setten, Michiel; Kljucar, Luka; Mao, Ming; Puliyalil, Harinarayanan; Pak, Murat; Teugels, Lieve; Tsvetanova, Diana; Banerjee, Kaustuv; Souriau, Laurent; Tokei, Zsolt; Goux, Ludovic; Kar, Gouri Sankar (2020) -
Cost effective FinFET platform for stand alone DRAM 1Y and beyond memory periphery
Spessot, Alessio; Sharan, Neha; Oh, Hyungrock; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Mallik, Arindam; De Keersgieter, An; Parvais, Bertrand; Sherazi, Yasser; Machkaoutsan, Vladimir; Kim, Cheolgyu; Fazan, Pierre; Mocuta, Dan; Mocuta, Anda; Horiguchi, Naoto (2018-01) -
Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node
Sakhare, Sushil; Perumkunnil, Manu; Huynh Bao, Trong; Rao, Siddharth; Kim, Woojin; Crotti, Davide; Yasin, Farrukh; Couet, Sebastien; Swerts, Johan; Kundu, Shreya; Yakimets, Dmitry; Baert, Rogier; Oh, Hyungrock; Spessot, Alessio; Mocuta, Anda; Kar, Gouri Sankar; Furnemont, Arnaud (2018) -
Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications
Oh, Hyungrock; Belmonte, Attilio; Perumkunnil, Manu; Mitard, Jerome; Rassoul, Nouredine; Donadio, Gabriele Luca; Delhougne, Romain; Furnemont, Arnaud; Kar, Gouri Sankar; Dehaene, Wim (2021) -
Exploring Pareto-Optimal Hybrid Main Memory Configurations Using Different Emerging Memories
Alinezhad Chamazcoti, Saeideh; Gupta, Mohit; Oh, Hyungrock; Evenblij, Timon; Catthoor, Francky; Perumkunnil, Manu; Kar, Gouri Sankar; Furnemont, Arnaud (2023) -
Half-threshold bias Ioff reduction down to nA range of thermally and electrically stable high-performance integrated OTS selector, obtained by Se enrichment and N-doping of thin GeSe layers
Avasarala, Naga Sruti; Donadio, Gabriele Luca; Witters, Thomas; Opsomer, Karl; Govoreanu, Bogdan; Fantini, Andrea; Clima, Sergiu; Oh, Hyungrock; Kundu, Shreya; Devulder, Wouter; van der Veen, Marleen; Van Houdt, Jan; Heyns, Marc; Goux, Ludovic; Kar, Gouri Sankar (2018) -
High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor
Popovici, Mihaela Ioana; Belmonte, Attilio; Oh, Hyungrock; Potoms, Goedele; Meersschaut, Johan; Richard, Olivier; Hody, Hubert; Van Elshocht, Sven; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2018) -
IGZO-based compute cell for analog in-memory computing - DTCO analysis to enable ultralow-power AI at edge
Saito, Daisuke; Doevenspeck, Jonas; Cosemans, Stefan; Oh, Hyungrock; Perumkunnil, Manu; Papistas, Ioannis; Belmonte, Attilio; Rassoul, Nouredine; Delhougne, Romain; Kar, Gouri Sankar; Debacker, Peter; Mallik, Arindam; Verkest, Diederik; Na, Myung Hee (2020) -
Main memory organization trade-offs with DRAM and STT-MRAM options based on gem5-NVMain simulation frameworks
Perumkunnil, Manu; Oh, Hyungrock; Hartmann, Matthias; Sakhare, Sushil; Tenllado, Christian; Ignacio Gomez, Jose; Kar, Gouri Sankar; Furnemont, Arnaud; Catthoor, Francky; Senni, Sophiane; Novo, David; Gamatie, Abdoulaye; Torres, Lionel (2018) -
Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm
Belmonte, Attilio; Oh, Hyungrock; Subhechha, Subhali; Rassoul, Nouredine; Hody, Hubert; Dekkers, Harold; Delhougne, Romain; Ricotti, Lorenzo; Banerjee, Kaustuv; Vaisman Chasin, Adrian; van Setten, Michiel; Puliyalil, Harinarayanan; Pak, Murat; Teugels, Lieve; Tsvetanova, Diana; Vandersmissen, Kevin; Kundu, Shreya; Heijlen, Jeroen; Batuk, Dmitry; Geypen, Jef; Goux, Ludovic; Kar, Gouri Sankar (2021)