Recently added

Reliability and parasitic issues in GaN-based power HEMTs

Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Zanoni, Enrico (2016)

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Meneghesso, Gaudenzio; Meneghini, Matteo; Bisi, Davide; Rossetto, Isabella; Wu, Tian-Li; Van Hove, Marleen; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan; Zanoni, Enrico (2016)

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Mendes Bordallo, Ciao Cesar; Sivieri, Victor B.; Martino, Joao Antonio; Agopian, Paula G. D.; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2016)

Impact of the NW-TFET diameter on the efficiency and the intrinsic voltage gain from a conduction regime perspective

Mendes Bordallo, Ciao Cesar; Sivieri, V.B.; Martino, Joao A.; Agopian, Paula G. A.; Rooyackers, Rita; Vandooren, Anne; Simoen, Eddy; Thean, Aaron; Claeys, Cor (2016)

Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K

Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Agopian, Paula Ghedini; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Smets, Quentin; Simoen, Eddy; Claeys, Cor; Collaert, Nadine (2016)

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Agopian, Paula G.D.; Alian, AliReza; Mols, Yves; Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Simoen, Eddy; Claeys, Cor; Collaert, Nadine; Thean, Aaron (2016)

Fixed-point refinement, a guaranteed approach towards energy efficient computing

Ménard, Daniel; Novo, David; Parashar, Karthick; Sentieys, Olivier (2016)

Nanoparticle scattering for multijunction solar cells: the tradeoff between absorption enhancement and transmission loss

Mellor, Alexander; Hylton, Nicholas P.; Hauser, Hubert; Tomos, Thomas; Lee, Kan-Hua; Al-Saleh, Yahya; Giannini, Vincenzo; Braun, Avi; Loo, Josine; Vercruysse, Dries; Van Dorpe, Pol; Bläsi, Benedikt; Maier, Stefan; Ekins-Daukes, Ned (2016)

APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2

Melkonyan, Davit; Fleischmann, Claudia; Veloso, Anabela; Arnoldi, Laurent; Kumar, Arul; Bogdanowicz, Janusz; Vurpillot, Francois; Vandervorst, Wilfried (2016)

Challenges for APT in advanced semiconductor technology research

Melkonyan, Davit; Fleischmann, Claudia; Bogdanowicz, Janusz; Arnoldi, Laurent; Kumar, Arul; Vurpillot, Francois; Vandervorst, Wilfried (2016)

Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2

Melkonyan, Davit; Arnoldi, Laurent; Fleischmann, Claudia; Kumar, Arul; Vurpillot, Francois; Bogdanowicz, Janusz; Vandervorst, Wilfried (2016)

Plasmonic-organic hybrid (POH) modulators

Melikyan, A.; Koehnle, K.; Palmer, R.; Koeber, S.; Muehlbrandt, S.; Schindler, P.C.; Elder, D.L.; Wolf, S.; Sommer, M.; Dalton, L.R.; Van Thourhout, Dries; Freude, W.; Kohl, M.; Leuthold, J.; Koos, C. (2016)

Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride elctrodes in vivo

Meijs, S.; Alcaide, M.; Sorensen, C.; McDonald, Matthew; Sorensen, S.; Rechendorff, K.; Gerhardt, A.; Nesladek, Milos; Rijkhoff, N.J.M.; Pennisi, C.P. (2016)

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

Mei, S; Bosman, M.; Raghavan, N.; Linten, Dimitri; Groeseneken, Guido; Horiguchi, Naoto; Pey, K.L. (2016)

In-situ optical emission spectroscopy diagnostic of plasma ignition impact on crystalline silicon passivation by a-Si:H films

Meddeb, Hosny; Bearda, Twan; Abdulraheem, Yaser; Dimassi, Wissem; Ezzaouia, Hatem; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef (2016)

EDA role in the design-technology co-optimization towards N7

Mattii, Luca; Raghavan, Praveen; Debacker, Peter; Berekovic, Mladen; Gerousis, Vassilios (2016)

imec Publications: Recent submissions

Reliability and parasitic issues in GaN-based power HEMTs

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Impact of the NW-TFET diameter on the efficiency and the intrinsic voltage gain from a conduction regime perspective

Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

Fixed-point refinement, a guaranteed approach towards energy efficient computing

Nanoparticle scattering for multijunction solar cells: the tradeoff between absorption enhancement and transmission loss

APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2

Challenges for APT in advanced semiconductor technology research

Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2

Plasmonic-organic hybrid (POH) modulators

Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride elctrodes in vivo

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

Solid-state 3D Li-ion batteries

High-throughput ion beam analysis in an industrial environment

Mass calibration of the energy axis in ToF-E elastic recoil detection analysis

Research and development on ion beam analysis in an industrial environment at imec

In-situ optical emission spectroscopy diagnostic of plasma ignition impact on crystalline silicon passivation by a-Si:H films

EDA role in the design-technology co-optimization towards N7

imec Publications: Recent submissions

Reliability and parasitic issues in GaN-based power HEMTs ﻿

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate ﻿

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes ﻿

Impact of the NW-TFET diameter on the efficiency and the intrinsic voltage gain from a conduction regime perspective ﻿

Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K ﻿

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs ﻿

Fixed-point refinement, a guaranteed approach towards energy efficient computing ﻿

Nanoparticle scattering for multijunction solar cells: the tradeoff between absorption enhancement and transmission loss ﻿

APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2 ﻿

Challenges for APT in advanced semiconductor technology research ﻿

Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2 ﻿

Plasmonic-organic hybrid (POH) modulators ﻿

Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride elctrodes in vivo ﻿

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study ﻿

Solid-state 3D Li-ion batteries ﻿

High-throughput ion beam analysis in an industrial environment ﻿

Mass calibration of the energy axis in ToF-E elastic recoil detection analysis ﻿

Research and development on ion beam analysis in an industrial environment at imec ﻿

In-situ optical emission spectroscopy diagnostic of plasma ignition impact on crystalline silicon passivation by a-Si:H films ﻿

EDA role in the design-technology co-optimization towards N7 ﻿

Reliability and parasitic issues in GaN-based power HEMTs

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Impact of the NW-TFET diameter on the efficiency and the intrinsic voltage gain from a conduction regime perspective

Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

Fixed-point refinement, a guaranteed approach towards energy efficient computing

Nanoparticle scattering for multijunction solar cells: the tradeoff between absorption enhancement and transmission loss

APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2

Challenges for APT in advanced semiconductor technology research

Emitter shape evolution during field evaporation and its impact on the reconstructed data of SiGe fins embedded in SiO2

Plasmonic-organic hybrid (POH) modulators

Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride elctrodes in vivo

New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

Solid-state 3D Li-ion batteries

High-throughput ion beam analysis in an industrial environment

Mass calibration of the energy axis in ToF-E elastic recoil detection analysis

Research and development on ion beam analysis in an industrial environment at imec

In-situ optical emission spectroscopy diagnostic of plasma ignition impact on crystalline silicon passivation by a-Si:H films

EDA role in the design-technology co-optimization towards N7