Toggle navigation
My submissions
Login
Toggle navigation
View item
imec Publications Repository
imec Publications
Conference contributions
View item
imec Publications Repository
imec Publications
Conference contributions
View item
JavaScript is disabled for your browser. Some features of this site may not work without it.
High yield sub-0.1μm² 6T-SRAM Cells, featuring high-k/metal-gate Finfet devices, double gate patterning, a novel Fin etch strategy, full-field EUV lithography and optimized junction design & layout
View/
open
20248.pdf (1.430Mb)
Metadata
Show full item record
Authors
Horiguchi, Naoto
;
Demuynck, Steven
;
Ercken, Monique
;
Locorotondo, Sabrina
;
Lazzarino, Frederic
;
Altamirano Sanchez, Efrain
;
Huffman, Craig
;
Brus, Stephan
;
Demand, Marc
;
Struyf, Herbert
;
De Backer, Johan
;
Hermans, Jan
;
Delvaux, Christie
;
Vandeweyer, Tom
;
Baerts, Christina
;
Mannaert, Geert
;
Truffert, Vincent
;
Verluijs, j
;
Alaerts, Wilfried
;
Dekkers, Harold
;
Ong, Patrick
;
Heylen, Nancy
;
Kellens, Kristof
;
Volders, Henny
;
Hikavyy, Andriy
;
Vrancken, Christa
;
Rakowski, Michal
;
Verhaegen, Staf
;
Vandenberghe, Geert
;
Beyer, Gerald
;
Lauwers, Anne
;
Absil, Philippe
;
Hoffmann, Thomas Y.
;
Ronse, Kurt
;
Biesemans, Serge
Conference
IEEE Symposium on VLSI Technology
Title
High yield sub-0.1μm² 6T-SRAM Cells, featuring high-k/metal-gate Finfet devices, double gate patterning, a novel Fin etch strategy, full-field EUV lithography and optimized junction design & layout
Publication type
Proceedings paper
Embargo date
9999-12-31
Collections
Conference contributions
Search imec Publications Repository
This collection
Browse
All of imec Publications Repository
Collections
Publication date
Authors
Titles
Subjects
imec author
Availability
Publication type
This collection
Publication date
Authors
Titles
Subjects
imec author
Availability
Publication type
My account
login