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Strained c:Si0.55Ge0.45 with Embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
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Strained c:Si0.55Ge0.45 with Embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
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Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ritzenthaler, Romain
;
Schram, Tom
;
Witters, Liesbeth
;
Mitard, Jerome
;
Spessot, Alessio
;
Caillat, Christian
;
Hellings, Geert
;
Eneman, Geert
;
Aoulaiche, Marc
;
Na, Hoon Joo
;
Son, Yunik
;
Noh, Kyung Bong
;
Fazan, Pierre
;
Lee, Sun Ghil
;
Collaert, Nadine
;
Mocuta, Anda
;
Horiguchi, Naoto
;
Thean, Aaron
Journal
Materials Science in Semiconductor Processing
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1979
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Acq. date: 2026-01-06
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Views
1979
since deposited on 2021-10-23
1
last month
1
last week
Acq. date: 2026-01-06
Citations