Browsing Conference contributions by author "Yadav, Sachin"
Now showing items 1-20 of 20
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Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Yu, Hao; Parvais, Bertrand; Peralagu, Uthayasankaran; ElKashlan, Rana Y.; Rodriguez, Raul; Khaled, Ahmad; Yadav, Sachin; Alian, AliReza; Zhao, Ming; Braga, N. de Almeida; Cobb, J.; Fang, J.; Cardinael, Pieter; Sibaja-Hernandez, Arturo; Collaert, Nadine (2022-12-01) -
Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier
ElKashlan, Rana Y.; Rodriguez, Raul; Yadav, Sachin; Peralagu, Uthayasankaran; Alian, AliReza; Collaert, Nadine; Wambacq, Piet; Parvais, Bertrand (2022) -
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
Yadav, Sachin; Cardinael, Pieter; Zhao, Ming; Vondkar Kodandarama, Komal; Peralagu, Uthayasankaran; Alian, Alireza; Khaled, Ahmad; Makovejev, Sergej; Ekoga, Enrique; Lederer, Dimitri; Raskin, Jean-Pierre; Parvais, Bertrand; Collaert, Nadine (2021) -
DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Yadav, Sachin; Vais, Abhitosh; ElKashlan, Rana Y.; Witters, Liesbeth; Vondkar Kodandarama, Komal; Mols, Yves; Walke, Amey; Yu, Hao; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021) -
ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
Wu, Wei-Min; Chen, Shih-Hung; Putcha, Vamsi; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Yadav, Sachin; Parvais, Bertrand; Alian, AliReza; Collaert, Nadine; Ker, Ming-Dou; Groeseneken, Guido (2021) -
ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Wu, Wei-Min; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Yadav, Sachin; Peralagu, Uthayasankaran; Yu, Hao; Alian, AliReza; Putcha, Vamsi; Parvais, Bertrand; Groeseneken, Guido; Ker, M.D.; Collaert, Nadine (2021) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
GaN-on-Porous Silicon for RF Applications
Scheen, Gilles; Tuyaerts, Romain; Cardinael, Pieter; Ekoga, Enrique; Aouadi, Khaled; Pavageau, Christophe; Rassekh, Amin; Nabet, Massinissa; Yadav, Sachin; Raskin, Jean-Pierre; Parvais, Bertrand; Emam, Mostafa (2023) -
GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
Parvais, Bertrand; Alian, AliReza; Peralagu, Uthayasankaran; Rodriguez, Raul; Yadav, Sachin; Khaled, Ahmad; ElKashlan, Rana Y.; Putcha, Vamsi; Sibaja-Hernandez, Arturo; Zhao, Ming; Wambacq, Piet; Collaert, Nadine; Waldron, Niamh (2020) -
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Boccardi, Guillaume; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Collaert, Nadine (2022) -
III-V on a Si platform for the next generations of communication systems
Parvais, Bertrand; Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Boccardi, Guillaume; Kunert, Bernardette; Collaert, Nadine (2022) -
III-V/III-N technologies for next generation high-capacity wireless communication
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Boccardi, Guillaume; Cardinael, Pieter; Chauhan, Vikas; Desset, Claude; ElKashlan, Rana Y.; Khaled, Ahmad; Ingels, Mark; Kunert, Bernardette; Mols, Yves; O'Sullivan, Barry; Peralagu, Uthayasankaran; Pinho, Nelson; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Sinha, Siddhartha; Sun, Xiao; Vais, Abhitosh; Vermeersch, Bjorn; Yadav, Sachin; Yan, Dongyang; Yu, Hao; Zhang, Yang; Zhao, Ming; Van Driessche, Veerle; Gramegna, Giuseppe; Wambacq, Piet; Parvais, Bertrand; Peeters, Michael (2022) -
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
Alian, Alireza; Rodriguez, Raul; Yadav, Sachin; Peralagu, Uthayasankaran; Sibaja-Hernandez, Arturo; Putcha, Vamsi; Zhao, Ming; ElKashlan, Rana Y.; Vermeersch, Bjorn; Yu, Hao; Bury, Erik; Khaled, Ahmad; Collaert, Nadine; Parvais, Bertrand (2022) -
Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates
Cardinael, P.; Rack, M.; Lederer, D.; Raskin, J-P; Yadav, Sachin; Zhao, Ming; Collaert, Nadine; Parvais, Bertrand (2021) -
Interpretation and modelling of dynamic-R-ON kinetics in GaN-on-Si HEMTs for mm-wave applications
Putcha, Vamsi; Yu, Hao; Franco, Jacopo; Yadav, Sachin; Alian, AliReza; Peralagu, Uthayasankaran; Parvais, Bertrand; Collaert, Nadine (2022) -
Substrate RF Losses and Non-linearities in GaN-on-Si HEMT Technology
Yadav, Sachin; Cardinael, Pieter; Zhao, Ming; Vondkar Kodandarama, Komal; Khaled, Ahmad; Rodriguez, Raul; Vermeersch, Bjorn; Makovejev, S.; Ekoga, E.; Pottrain, A.; Waldron, Niamh; Raskin, J.-P.; Parvais, Bertrand; Collaert, Nadine (2020) -
The revival of compound semiconductors and how they will change the world in a 5G/6G era
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Vondkar Kodandarama, Komal; Khaled, Ahmad; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
Thermal Modelling of GaN & InP RF Devices with Intrinsic Account for Nanoscale Transport Effects
Vermeersch, Bjorn; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Vais, Abhitosh; Yadav, Sachin; Parvais, Bertrand; Collaert, Nadine (2022) -
Transistor modelling for mm-Wave technology pathfinding
Parvais, Bertrand; ElKashlan, Rana Y.; Yu, Hao; Sibaja-Hernandez, Arturo; Vermeersch, Bjorn; Putcha, Vamsi; Cardinael, Pieter; Rodriguez, Raul; Khaled, Ahmad; Alian, AliReza; Peralagu, Uthayasankaran; Zhao, Ming; Yadav, Sachin; Gramegna, Giuseppe; Van Driessche, Joris; Collaert, Nadine (2021)