Browsing Conference contributions by imec author "cfeac300a2b810bbc58c951d19b96bda1a093dc7"
Now showing items 1-18 of 18
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200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application
Zhao, Ming; Li, Xiangdong; Decoutere, Stefaan (2019) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2017) -
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
A comprehensive study of MOVPE growth on 200 mm GaN-on-SOI for monolithic integrated GaN ICs
Zhao, Ming; Geens, Karen; Li, Xiangdong; Amirifar, Nooshin; Decoutere, Stefaan (2021) -
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors
Geens, Karen; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; atka, Alexander; Vincze, Andrej; Decoutere, Stefaan (2017) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Influence of driver integration on GaN enhancement mode transistor performance
Deckers, Martijn; Ravyts, Simon; Dalla Vecchia, Mauricio; Chatterjee, Urmimala; Li, Xiangdong; Decoutere, Stefaan; Driesen, Johan (2020) -
Influence of Driver Integration on GaN Enhancement Mode Transistor Performance
Deckers, Martijn; Ravyts, Simon; Dalla Vecchia, Mauricio; Chatterjee, Urmimala; Li, Xiangdong; Decoutere, Stefaan; Driesen, Johan (2020) -
Integration of GaN power ICs on 200 mm engineered substrates
Li, Xiangdong; Geens, Karen; Wellekens, Dirk; Zhao, Ming; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Fahle, Dirk; Hahn, Herwig; Odnoblyudov, Vlad; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2020) -
MOCVD growth and characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration
Zhao, Ming; Geens, Karen; Li, Xiangdong; Van Hove, Marleen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Langer, Robert; Decoutere, Stefaan (2017) -
Monolithic integration of half-bridge on GaN-on-SOI
Li, Xiangdong; Zhao, Ming; Geens, Karen; Guo, Weiming; You, Shuzhen; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2018) -
Monolithically integrated GaN power ICs design facilitated by the MVSG compact model applied to enhancement-mode p-GaN gate HEMTs
You, Shuzhen; Li, Xiangdong; Parvais, Bertrand; Posthuma, Niels; Geens, Karen; Stoffels, Steve; Decoutere, Stefaan (2019) -
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors
You, Shuzhen; Li, Xiangdong; Decoutere, Stefaan; Groeseneken, Guido; Chen, Zhanfei; Liu, Jun; Yamashita, Yuki; Kobayashi, Kazutoshi (2019) -
p-GaN gate HEMTs, RTL logic, and gate driver monolithically integrated on 200 mm QST® substrates for GaN ICs
Li, Xiangdong; Geens, Karen; Guo, Weiming; Zhao, Ming; You, Shuzhen; Posthuma, Niels; Stoffels, Steve; Liang, Hu; Odnoblyudov, Vladimir; Basceri, Cem; Aktas, Ozgur; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates
Magnani, Alessandro; Cosnier, Thibault; Amirifar, Nooshin; Zhao, Ming; Li, Xiangdong; Geens, Karen; Decoutere, Stefaan (2020)