Browsing Conference contributions by imec author "d14bfc77a8564ca5bec1ce6976b19b7352ad86f4"
Now showing items 1-20 of 31
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An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
De Jaeger, Brice; Van Hove, Marleen; Wellekens, Dirk; Kang, Xuanwu; Liang, Hu; Mannaert, Geert; Geens, Karen; Decoutere, Stefaan (2012) -
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, Karen; Herwig, Hahn; Liang, Hu; Borga, Matteo; Cingu, Deepthi; You, Shuzhen; Marx, Matthias; Oligschlaeger, Robert; Fahle, Dirk; Heuken, Michael; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Decoutere, Stefaan (2021) -
Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
You, Shuzhen; Posthuma, Niels; Ronchi, Nicolo; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Novak, Tomas; Van Hove, Marleen; Stoffels, Steve; De Jaeger, Brice; Posthuma, Niels; Marcon, Denis; Decoutere, Stefaan; Langer, Robert (2015) -
DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs
Drobnŭ, Jakub; Marek, Juraj; Koza, A.; Vadovski, J.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices
Marek, Juraj; Mikoláek, Miroslav; Drobnŭ, Jakub; Kozarik, Jozef; Chvála, Ale; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN-on-SOI: Monolithically integrated all GaN ICs for power conversion
Li, Xiangdong; Amirifar, Nooshin; Geens, Karen; Zhao, Ming; Guo, Weiming; Liang, Hu; You, Shuzhen; Posthuma, Niels; De Jaeger, Brice; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Cosnier, Thibault; Langer, Robert; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Gate module study for performance improvement in vertical GaN device
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Posthuma, Niels; Heuken, Michael (2016) -
Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
Eickelkamp, Martin; Fahle, Dirk; Mauder, Christof; Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Heuken, Michael (2016) -
Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT
Martin, Eickelkamp; Fahle, Dirk; Mauder, Christof; Zhao, Ming; Liang, Hu; Posthuma, Niels; Van Hove, Marleen; Heuken, Michael (2017) -
Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si(111) substrates
Zhao, Ming; Saripalli, Yoga; Kandaswamy, Prem Kumar; Liang, Hu; Firrincieli, Andrea; Decoutere, Stefaan; Vancoille, Eric (2013) -
Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE
Liang, Hu; Saripalli, Yoga; Van Hove, Marleen; Kang, Xuanwu; Vrancken, Evi; Zhao, Ming; Kandaswamy, Prem Kumar; Decoutere, Stefaan; Langer, Robert (2014) -
Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Posthuma, Niels; You, Shuzhen; Liang, Hu; Ronchi, Nicolo; Kang, Xuanwu; Wellekens, Dirk; Saripalli, Yoga; Decoutere, Stefaan (2016) -
MOCVD growth of DH-HEMT buffers with low-temperature ALN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Van Hove, Marleen; Venegas, Rafael; Vrancken, Evi; Favia, Paola; Vanderheyden, Annelies; Vanhaeren, Danielle; Saripalli, Yoga; Decoutere, Stefaan; Langer, Robert (2015) -
Next generation 200mm substrates for GaN power devices
Stoffels, Steve; Geens, Karen; Zhao, Ming; Liang, Hu; Van Hove, Marleen; Decoutere, Stefaan (2017-05)