Reaction mechanisms of Sn-complex-side-chain polymer used for extreme ultraviolet lithography, studied by electron pulse radiolysis and & gamma;-radiolysis

Abstract

The development of highly sensitive resists containing tin, which has a large EUV absorption cross section, has recently attracted considerable attention in EUV lithography. The effective utilization of secondary electrons is required for the development of high-performance resists. It is important to design resist materials on the basis of the mechanism of radiation chemical reactions. In this study, the radiation-induced reactions of tetraphenyltin (TPSn), triphenylsulfonium triflate (TPS-Tf), and the copolymer of triphenyl(4-vinylphenyl) stannane (TPSnSt) and 4-methacryloxyphenyldiphenylsulfonium triflate (MAPDPS-Tf) were investigated by electron pulse radiolysis and & gamma;-radiolysis in controlled reaction systems. The decomposed products were analyzed by high-performance liquid chromatography. The G values of decomposed products were determined. For the copolymer, the holes generated by ionizing radiations moved to Sn units and electrons moved to TPS-Tf units. The tin complex side chain decomposed, producing benzene after hole transfer.