Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Wynocker, Isabella R.; Zhang, En Xia; Reed, Robert A.; Schrimpf, Ronald D.; Arreghini, Antonio; Bastos, Joao; van den Bosch, Geert; Linten, Dimitri; Fleetwood, Daniel M.

doi:10.1109/TNS.2024.3431436

Publication:

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Date

2024

Journal article

https://doi.org/10.1109/TNS.2024.3431436

Simple item page Full metadata Statistics

Files

Published version 1.8 MB

Author(s)

Wynocker, Isabella R.

;

;

;

;

;

;

;

;

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Metrics

166 since deposited on 2024-09-21

22last month

Acq. date: 2026-01-11

420 since deposited on 2024-09-21

Acq. date: 2026-01-12

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Date

Files

Author(s)

Journal

Abstract

Description

Metrics

Downloads

Views

Citations

Metrics

Downloads

Views

Citations