Publication:

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Date

2024
Journal article
https://doi.org/10.1109/tns.2024.3431436
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Published version 1.8 MB

Author(s)

Wynocker, Isabella R.
;
Zhang, En Xia
;
Reed, Robert A.
;
Schrimpf, Ronald D.
;
Arreghini, Antonio  
;
Bastos, Joao  
;
van den Bosch, Geert
;
Linten, Dimitri  
;
Fleetwood, Daniel M.

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

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250 since deposited on 2024-09-21
13last month
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Acq. date: 2026-07-18

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422 since deposited on 2024-09-21
Acq. date: 2026-07-18

Citations