Browsing Articles by imec author "161047720509463b8eb08eda56887779c992df2a"
Now showing items 61-80 of 171
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Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: a first principles insight
Clima, Sergiu; Wouters, Dirk; Adelmann, Christoph; Schenk, Tony; Schroeder, Uwe; Jurczak, Gosia; Pourtois, Geoffrey (2014) -
Imaging the three-dimension conductive channel in filamentary-based oxide resistive switching memory
Celano, Umberto; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Richard, Olivier; Bender, Hugo; Jurczak, Gosia; Vandervorst, Wilfried (2015) -
Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
Mahatme, N.; Zhang, E.; Reed, R.A.; Bhuva, B.L.; Schrimpf, R.D.; Fleetwood, D.M.; Linten, Dimitri; Simoen, Eddy; Griffoni, Alessio; Aoulaiche, Marc; Jurczak, Gosia; Groeseneken, Guido (2012) -
Impact of electrode composition and processing on the low frequency noise in SrTiO3 MIM capacitors
Giusi, Guino; Aoulaiche, Marc; Swerts, Johan; Popovici, Mihaela Ioana; Simoen, Eddy; Jurczak, Gosia (2014) -
Impact of fin with on digital and analog performances of nFinFETs
Subramanian, Vaidy; Mercha, Abdelkarim; Parvais, Bertrand; Loo, Josine; Gustin, Cedric; Dehan, Morin; Collaert, Nadine; Jurczak, Gosia; Decoutere, Stefaan (2007) -
Impact of LER and random dopant fluctuations on FinFET matching performance
Baravelli, Emanuele; Jurczak, Gosia; Speciale, N.; De Meyer, Kristin; Dixit, Abhisek (2008) -
Impact of line-edge roughness on FinFET matching performance
Baravelli, Emanuele; Dixit, Abhisek; Rooyackers, Rita; Jurczak, Gosia; Speciale, Nicolo; De Meyer, Kristin (2007) -
Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 $lA)
Belmonte, Attilio; Fantini, Andrea; Redolfi, Augusto; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2016) -
Improved thermal stability and retention properties of Cu-Te based CBRAM by Ge alloying
Devulder, Wouter; Opsomer, Karl; Rampelberg, Geert; De Schutter, Bob; Devloo-Casier, Kilian; Jurczak, Gosia; Goux, Ludovic; Detavernier, Christophe (2015) -
In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs
Andrieu, F.; Ernst, T.; Ravit, Claire; Jurczak, Gosia; Gibaudo, G.; Deleonibus, S. (2005) -
Independent double-gate FinFets with asymmetric gate stacks
Masahara, Meishoku; Surdeanu, Radu; Witters, Liesbeth; Doornbos, Gerben; Nguyen Hoang, Viet; Van den Bosch, Geert; Vrancken, Christa; Devriendt, Katia; Neuilly, Francois; Kunnen, Eddy; Suzuki, E.; Jurczak, Gosia; Biesemans, Serge (2007) -
Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells
Devulder, Wouter; Opsomer, Karl; Seidel, Felix; Belmonte, Attilio; Muller, Robert; De Schutter, Bob; Bender, Hugo; Vandervorst, Wilfried; Van Elshocht, Sven; Jurczak, Gosia; Goux, Ludovic; Detavernier, Christophe (2013) -
Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells
Devulder, Wouter; Opsomer, Karl; Franquet, Alexis; Meersschaut, Johan; Belmonte, Attilio; Muller, Robert; De Schutter, Bob; Van Elshocht, Sven; Jurczak, Gosia; Goux, Ludovic; Detavernier, Christophe (2014) -
Influence of fin width on the total dose behavior of p-channe bulk MuGFETs
Put, Sofie; Simoen, Eddy; Jurczak, Gosia; Van Uffelen, Marco; Leroux, Paul; Claeys, Cor (2010) -
Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1-x/Al2O3 interfaces for CBRAM
De Stefano, Francesca; Afanasiev, Valeri; Houssa, Michel; Goux, Ludovic; Opsomer, Karl; Jurczak, Gosia; Stesmans, Andre (2014) -
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
Goux, Ludovic; Opsomer, Karl; Degraeve, Robin; Muller, Robert; Detavernier, C; Wouters, Dirk; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2011) -
Influence of the microstructure on the oxidation of Ni thin films
Lisoni, Judit; Goux, Ludovic; Hoffmann, Thomas; Díaz-Droguett, Donovan; Jurczak, Gosia (2012) -
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
Chen, Yangyin; Pourtois, Geoffrey; Adelmann, Christoph; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Jurczak, Gosia; Kittl, Jorge; Groeseneken, Guido; Wouters, Dirk (2012) -
Interface stability in advanced high-k-metal-gate stacks
Adelmann, Christoph; Franquet, Alexis; Conard, Thierry; Witters, Thomas; Ferain, Isabelle; Meersschaut, Johan; Jurczak, Gosia; De Meyer, Kristin; Kittl, Jorge; Van Elshocht, Sven (2009) -
Intrinsic tailing of LRS/HRS distributions in amorphous HfO and TaO based RRAM
Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Degraeve, Robin; Govoreanu, Bogdan; Pourtois, Geoffrey; Jurczak, Gosia (2015)