Browsing Articles by imec author "668c9257fa3a28e612560d290c63fa62b21f696d"
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A combinatorial study of SiGeAsTe thin films for application as an Ovonic threshold switch selector
Devulder, Wouter; Garbin, Daniele; Clima, Sergiu; Donadio, Gabriele Luca; Fantini, Andrea; Govoreanu, Bogdan; Detavernier, Christophe; Chen, Larry; Miller, Michael; Goux, Ludovic; Van Elshocht, Sven; Swerts, Johan; Delhougne, Romain; Kar, Gouri Sankar (2022-07-01) -
A thermally stable and high-performance 90nm Al2O3\Cu-based 1T1R CBRAM cell
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
Analysis of complementary RRAM switching
Wouters, Dirk; Zhang, Leqi; Fantini, Andrea; Degraeve, Robin; Goux, Ludovic; Chen, Yangyin; Govoreanu, Bogdan; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2012) -
Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CBRAM devices
Belmonte, Attilio; Celano, Umberto; Redolfi, Augusto; Fantini, Andrea; Muller, Robert; Vandervorst, Wilfried; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Asymmetry and switching phenomenology in TiN\(Al2O3)\HfO2\Hf systems
Goux, Ludovic; Fantini, Andrea; Govoreanu, Bogdan; Kar, Gouri Sankar; Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Wouters, Dirk; Pourtois, Geoffrey; Jurczak, Gosia (2012-08) -
Balancing SET/RESET pulse for >1010 endurance in HfO2 / Hf 1T1R bipolar RRAM
Chen, Yangyin; Govoreanu, Bogdan; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk; Groeseneken, Guido; Kittl, Jorge; Jurczak, Gosia; Altimime, Laith (2012) -
Causes and consequences of the stochastic aspect of filamentary RRAM
Degraeve, Robin; Fantini, Andrea; Raghavan, Nagarajan; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Belmonte, Attilio; Linten, Dimitri; Jurczak, Gosia (2015) -
Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Hatem, Firas; Degraeve, Robin; Diao, Qihui; Zhang, Jian Fu; Freitas, Pedro; Marsland, John; Fantini, Andrea; Garbin, Daniele; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
Reale, G.; Belmonte, Attilio; Fantini, Andrea; Radhakrishnan, Janaki; Redolfi, Augusto; Devulder, Wouter; Nyns, Laura; Kundu, Shreya; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2021) -
Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Chen, Yangyin; Groeseneken, Guido; Jurczak, Gosia (2015) -
Endurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM
Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Degraeve, Robin; Kar, Gouri Sankar; Fantini, Andrea; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Evidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells
Goux, Ludovic; Fantini, Andrea; Chen, Yangyin; Redolfi, Augusto; Degraeve, Robin; Jurczak, Gosia (2014) -
Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application
Kumar, Ankit; Degraeve, Robin; Beckers, Arthur; Fantini, Andrea; Verbauwhede, Ingrid; Linten, Dimitri; Kar, Gouri Sankar (2023) -
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Clima, Sergiu; Chen, Yangyin; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Fantini, Andrea; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Imaging the three-dimension conductive channel in filamentary-based oxide resistive switching memory
Celano, Umberto; Goux, Ludovic; Degraeve, Robin; Fantini, Andrea; Richard, Olivier; Bender, Hugo; Jurczak, Gosia; Vandervorst, Wilfried (2015) -
Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching
Zhou, Xue; Hu, Zeyu; Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Degraeve, Robin; Zhang, Jian Fu; Fantini, Andrea; Garbin, Daniele; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2022) -
Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 $lA)
Belmonte, Attilio; Fantini, Andrea; Redolfi, Augusto; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2016) -
Intrinsic tailing of LRS/HRS distributions in amorphous HfO and TaO based RRAM
Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Degraeve, Robin; Govoreanu, Bogdan; Pourtois, Geoffrey; Jurczak, Gosia (2015) -
Kinetic and thermodynamic heterogeneity - an intrinsic source of variability in CBRAM resistive memories
Clima, Sergiu; Belmonte, Attilio; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Ota, Kensuke; Redolfi, Augusto; Kar, Gouri Sankar; Pourtois, Geoffrey (2017) -
Low-current operation of novel Gd2O3-based RRAM cells with large memory window
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016-09)