Browsing Articles by imec author "668c9257fa3a28e612560d290c63fa62b21f696d"
Now showing items 21-40 of 43
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Modeling and demonstration of oxygen vacancy-based RRAM as probabilistic device for sequence learning
Doevenspeck, Jonas; Degraeve, Robin; Fantini, Andrea; Debacker, Peter; Verkest, Diederik; Lauwereins, Rudy; Dehaene, Wim (2020) -
Modeling the impact of reset depth on vacancy-induced filament perturbations in HfO2 RRAM
Raghavan, Naga; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013) -
New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors
Hu, Zeyu; Zhang, Weidong; Degraeve, Robin; Garbin, Daniele; Chai, Zheng; Saxena, Nishant; Freitas, Pedro; Fantini, Andrea; Ravsher, Taras; Clima, Sergiu; Zhang, Jian Fu; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2023) -
Novel flexible and cost-effective retention assessment method for TMO-based RRAM
Chen, Michael; Fantini, Andrea; Goux, Ludovic; Gorine, Georgi; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016) -
NPN SiGe Hetero Junction Transistor Latch-Up Memory Selector
Hiblot, Gaspard; Ravsher, Taras; Loo, Roger; Yengula Venkata Ramana, Bhuvaneshwari; Canvel, Yann; Franchina Vergel, Nathali; Fantini, Andrea; Houshmand Sharifi, Shamin; Bazzazian, Nina; Ayyad, Mustafa; Merkulov, Alex; Kar, Gouri Sankar; Couet, Sebastien (2023-02-03) -
On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure
Wu, Yung-Hsien; Wouters, Dirk; Hendrickx, Paul; Zhang, Leqi; Chen, Yangyin; Goux, Ludovic; Fantini, Andrea; Groeseneken, Guido; Jurczak, Gosia (2013) -
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
Goux, Ludovic; Raghavan, Naga; Fantini, Andrea; Nigon, Robin; Strangio, Sebastiano; Degraeve, Robin; Kar, Gouri Sankar; Chen, Yangyin; De Stefano, Francesca; Afanasiev, Valeri; Jurczak, Gosia (2014) -
Operating-current dependence of the Cu-mobility requirements in oxide-based conductive-bridge RAM
Belmonte, Attilio; Celano, Umberto; Degraeve, Robin; Fantini, Andrea; Redolfi, Augusto; Vandervorst, Wilfried; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability
Belmonte, Attilio; Degraeve, Robin; Fantini, Andrea; Kim, W; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2014) -
Ovonic Threshold Switch Chalcogenides: Connecting the First-Principles Electronic Structure to Selector Device Parameters
Clima, Sergiu; Ravsher, Taras; Garbin, Daniele; Degraeve, Robin; Fantini, Andrea; Delhougne, Romain; Kar, Gouri Sankar; Pourtois, Geoffrey (2023) -
OxRRAM-Based Analog in-Memory Computing for Deep Neural Network Inference: A Conductance Variability Study
Doevenspeck, Jonas; Degraeve, Robin; Fantini, Andrea; Cosemans, Stefan; Mallik, Arindam; Debacker, Peter; Verkest, Diederik; Lauwereins, Rudy; Dehaene, Wim (2021) -
Polarity-Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition
Ravsher, Taras; Garbin, Daniele; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Donadio, Gabriele Luca; Kundu, Shreya; Hody, Hubert; Devulder, Wouter; Van Houdt, Jan; Afanas'ev, Valeri; Delhougne, Romain; Kar, Gouri Sankar (2023) -
Postcycling LRS retention analysis in HfO2/HF RRAM 1T1R device
Chen, Yangyin; Degraeve, Robin; Govoreanu, Bogdan; Clima, Sergiu; Goux, Ludovic; Fantini, Andrea; Kar, Gouri Sankar; Wouters, Dirk; Groeseneken, Guido (2013) -
Quantitative retention model for filamentary oxide-based resistive RAM
Degraeve, Robin; Chen, Michael; Celano, Umberto; Fantini, Andrea; Goux, Ludovic; Linten, Dimitri; Kar, Gouri Sankar (2017) -
RRAMs based on anionic and cationic switching: a short overview
Clima, Sergiu; Sankaran, Kiroubanand; Chen, Yangyin; Fantini, Andrea; Celano, Umberto; Belmonte, Attilio; Zhang, Leqi; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Wouters, Dirk; Jurczak, Gosia; Vandervorst, Wilfried; De Gendt, Stefan; Pourtois, Geoffrey (2014) -
Scalability of valence change memory: from devices to tip-induced filaments
Celano, Umberto; Fantini, Andrea; Degraeve, Robin; Jurczak, Gosia; Goux, Ludovic; Vandervorst, Wilfried (2016) -
Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch
Ravsher, Taras; Garbin, Daniele; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Donadio, Gabriele Luca; Kundu, Shreya; Hody, Hubert; Devulder, Wouter; Van Houdt, Jan; Afanas'ev, Valeri; Delhougne, Romain; Kar, Gouri Sankar (2023-05) -
Single- and multiple-event induced upsets in HfO2/Hf 1T1R RRAM
Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Mendenhall, M.H.; Alles, M.; Bi, J.; Zhang, E.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014) -
Stack optimization of oxide-based RRAM for fast write speed (<1 $ls) at low operating current (<10 $lA)
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016) -
Statistical insight into controlled forming and forming free stacks for HfOx RRAM
Raghavan, Naga; Fantini, Andrea; Degraeve, Robin; Roussel, Philippe; Goux, Ludovic; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013)