Browsing Presentations by author "Naili, Mohamed"
Now showing items 1-5 of 5
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Alternative gate insulator materials for future generation MOSFETs
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Jos; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, R.; Wilhelm, Rudi; Young, Edward; Zhao, Chao (2001) -
Electrical properties of metal-insulator-semiconductor devices with high permittivity gate dielectric layers
Houssa, Michel; Degraeve, Robin; Heyns, Marc; Kaczer, Ben; Groeseneken, Guido; Naili, Mohamed; Mertens, Paul; Stesmans, Andre; Jeon, J. S.; Halliyal, A. (2000) -
High k dielectric materials prepared by atomic layer CVD
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Guido; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, Wilfried; Wilhelm, Rudi; Yang, E.; Zhao, Chao (2001) -
High temperature grazing incidence XRD study on in-situ crystallization in ultra-thin oxide films
Zhao, Chao; Roebben, G.; Young, Edward; Bender, Hugo; Houssa, Michel; Naili, Mohamed; De Gendt, Stefan (2000) -
Surface cleaning issues in thin-oxide technology
Mertens, Paul; Bearda, Twan; Houssa, Michel; Loewenstein, Lee; Teerlinck, Ivo; De Gendt, Stefan; Vos, Rita; Kenis, Karine; Naili, Mohamed; Heyns, Marc (1999)