Browsing by Author "Agbo, Innocent"
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Publication Bias temperature instability analysis of FinFET based SRAM cells
Proceedings paper2014, Design, Automation and Test in Europe Conference - DATE, 24/03/2014, p.1-6Publication BTI analysis for high performance and low power SRAM sense amplifier designs
Proceedings paper2015, 4th MEDIAN Project Workshop (organised as a DATE 2015 Friday Workshop), 1/03/2015Publication Comparative analysis of RD and atomistic trap-based BTI models on SRAM sense amplifier
Proceedings paper2015, 10th International Conference on Design & Technology of Integrated Systems in Nanoscale Era - DTIS, 1/03/2015, p.1-6Publication Comparative BTI analysis for various sense amplifier designs
Proceedings paper2016, IEEE 19th International Symposium on Design and Diagnostics of Electronic Circuits & Systems - DDECS, 20/04/2016, p.1-6Publication Comparative BTI impact for SRAM cell and sense amplifier designs
Proceedings paper2015, MEDIAN Finale - Workshop on Manufacturable and Dependable Multicore Architectures at Nanoscale, 10/11/2015Publication Degradation analysis of high performance 14nm FinFET SRAM
Proceedings paper2018, 21th ACM/IEEE Design and Test in Europe Conference- DATE, 19/03/2018, p.201-206Publication Estimation of sense amplifier offset voltage degradation due to zero- and run-time variability
Oral presentation2017, ICT Open WorkshopPublication Hardware-based aging mitigation scheme for memory address decoder
Proceedings paper2019, 24th IEEE European Test Symposium (ETS), 2/05/2019, p.1-6Publication Impact and mitigation of sense amplifier aging degradation using realistic workloads
Journal article2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (25) 12, p.319-327Publication Impact and mitigation of SRAM read path aging
Journal article2018, Microelectronics Reliability, 87, p.158-167Publication Integral impact of BTI and voltage temperature variation on SRAM sense amplifier
Proceedings paper2015, IEEE 33rd VLSI Test Symposium - VTS, 27/04/2015, p.1-6Publication Integral Impact of BTI, PVT-variation and Workload on SRAM Sense Amplifier
Journal article2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (25) 4, p.1444-1454Publication Methodology for application-dependent degradation analysis of memory timing
Proceedings paper2019, 22nd ACM/IEEE Design, Automation and Test in Europe Conference (DATE), 2/03/2019, p.162-167Publication Mitigation of sense amplifier degradation using input switching
Proceedings paper2017, 20th ACM/IEEE Design and Test in Europe Conference - DATE, 28/03/2017, p.858-863Publication Parametric and functional degradation analysis of complete 14-nm FinFET SRAM
Journal article2019, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (27) 6, p.1308-1321Publication Quantification of sense amplifier offset voltage degradation due to zero-and run-time variability
Proceedings paper2016, IEEE Computer Society Annual Symposium on VLSI - ISVLSI, 11/06/2016, p.725-730Publication Read path degradation analysis in SRAM
Proceedings paper2016, 21th IEEE European Test Symposium - ETS, 23/05/2016, p.1-2Publication Sense amplifier offset voltage analysis for both time-zero and time-dependent variability
Journal article2019, Microelectronics Reliability, 99, p.52-61Publication Sense amplifier offset voltage mitigation under presence of BTI
Proceedings paper2017, Workshop on Reliability, Security and Quality - RESCUE, 22/05/2017