Browsing by Author "Agopian, P.G.D."
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Publication Analog performance of 60 MeV proton-irradiated SOI MuGFETs with different strain technologies
Proceedings paper2011, 7th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 17/01/2011, p.61-62Publication Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Proceedings paper2017, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 3/04/2017, p.109-112Publication Back bias influence on analog performance of pTFET
Proceedings paper2013, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 7/10/2013, p.9a.4Publication Biaxial + uniaxial stress effectiveness in tri-gate SOI nMOSFETs with vaiable fin dimensions
Proceedings paper2012, IEEE International SOI Conference, 1/10/2012, p.4.11Publication Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs
Proceedings paper2012, Proceedings of the 27th Symposium on Microelectronics Technology and Devices - SBMicro, 30/08/2012, p.145-152Publication Comparison between vertical silicon NW-TFET and NW-MOSFET from analog point of view
Proceedings paper2015, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 26/01/2015, p.233-236Publication Comparison of current mirrors designed with TFET and FinFET devices for different dimensions and temperatures
Proceedings paper2015, Advanced CMOS-Compatible Semiconductor Devices 17, 24/05/2015, p.303-308Publication DIBL performance of 60 MeV proton-irradiated SOI MuGFETs
Proceedings paper2010, International Conference on Solid-State and Integrated Circuit Technology, 1/11/2010Publication Experimental analog performance of pTFETs as a function of temperature
Proceedings paper2012, IEEE International SOI Conference, 1/10/2012, p.4.8Publication Experimental comparison between relaxed and strained Ge pFinFETs
Proceedings paper2017, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 3/04/2017, p.180-183Publication Fin shape influence on the analog performance of standard and trained MuGFETs
Proceedings paper2010, SOI Conference, 11/10/2010Publication Global and/or local strain influence on p and n MuGFET analog performance
Proceedings paper2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15, 1/05/2011, p.154-150Publication Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
Proceedings paper2018, 33rd Symposium on Microelectronics Technology and Devices (SBMicro), 27/08/2018, p.1-4Publication High temperature influence on analog parameters of bulk and SOI nFinFETs
Proceedings paper2015, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 26/01/2015, p.293-296Publication Impact of gate stack dielectric on intrinsic voltage gain and low frequency noise in Ge pMOSFETs
Proceedings paper2015, Advanced CMOS-Compatible Semiconductor Devices 17, 24/05/2015, p.309-314Publication Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs
Proceedings paper2011, European Conference on Radiation Effects on Component and Systems - RADECS, 19/09/2011, p.7-10Publication Low temperature performance of proton irradiated strained SOI FinFET
Proceedings paper2017, Joint International EUSOSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 3/04/2017, p.1-3Publication Radiation hardness aspects of advanced FinFET and UTBOX devices
Proceedings paper2012, IEEE International SOI Conference, 1/10/2012, p.3.7Publication SEG and fin dimensions influence on biaxial stress effectiveness in tri-gate SOI nMOSFETs
Proceedings paper2012, 8th European Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 24/01/2012, p.121-122Publication SEG and uniaxial strain influence on FinFET performance at low temperature
Proceedings paper2010, 9th International Workshop on Low Temperature Electronics - WOLTE, 21/06/2010, p.23-26