Browsing by Author "Agopian, Paula G. D."

Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures

Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices

Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices

Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C

Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOS Transistors

Experimental comparison between pMuGTFET and pFinFET analog performance as a function of temperature

Experimental study of MISHEMT from 450 K down to 200 K for analog applications

High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack

Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs

Influence of the Ge amount at the source on transistor efficiency of vertical gate all around TFETs for different conduction regimes

Low frequency noise analysis and modeling in vertical tunnel FETs with Ge Source

Operational Transconductance Amplifier Design with Gate- All-Around Nanosheet MOSFET using Experimental Lookup Table Approach

Operational Transconductance Amplifier Designed with SiGe-source Nanowire Tunnel-FET using Experimental Lookup Table Model

Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K

Temperature influence on experimental analog behavior of MISHEMTs

Trade-off analysis between gm/I-D and f(T) of nanosheet NMOS transistors with different metal gate stack at high temperature

Two-Stage Transconductance Operational Amplifier designed with VFET experimental data