Browsing by Author "Agopian, Paula G.D."
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Publication AlGaN/GaN MISHEMT analysis from an analog point of view up to 150 oC
Proceedings paper2020, EUROSOI/ULIS 2020, 31/03/2020Publication Analog performance of standard and uinaxial strained triple-gate SOI FinFET under X-ray radiation
Publication Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Journal article2017, Semiconductor Science and Technology, (32) 5, p.55015Publication Device-based threading dislocation assessment in germanium hetero-epitaxy
Proceedings paper2019, SBMICRO 2019, 26/08/2019Publication Enhanced model for ZTC in irradiated and strained pFinFET
Proceedings paper2017, 32nd Symposium on Microelectronics Technology and Devices - SBMicro, 28/08/2017, p.1-4Publication Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETs
Proceedings paper2009, 5th EUROSOI Workshop, 19/01/2009, p.39-40Publication Gate oxide thickness influence on the gate induced floating body effect in SOI technology
Journal article2008, Journal of Integrated Circuits and Systems, (3) 2, p.91-95Publication GR-noise characterization of Ge pFinFETs with STI first and STI last process
Journal article2016, IEEE Electron Device Letters, (37) 9, p.1092-1095Publication Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
Proceedings paper2020, 237th ECS Spring Meeting - Symposium Advanced CMOS-compatible Semiconductor Devices 19, 10/05/2020, p.53-58Publication Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
Proceedings paper2016, 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 10/10/2016, p.1-3Publication Influence of proton radiation and strain on nFinFET zero temperature coefficient
Proceedings paper2016, 31st Symposium on Microelectronics Technology and Devices - SBMicro, 29/08/2016Publication Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
Proceedings paper2016, High Purity and High Mobility Semiconductors 14, 2/10/2016, p.213-218Publication NW-TFET analog performance for different gate oxide thickness and Ge source
Publication NW-TFET analog performance for different Ge source compositions
Proceedings paper2013, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 7/10/2013, p.7.14Publication OTA performance comparison designed with experimental NW-MOSFET and NW-TFET devices
Proceedings paper2019, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, 14/10/2019Publication Proton radiation effects on the analog performance of bulk n- and p-FinFETs
Proceedings paper2015, Advanced CMOS-Compatible Semiconductor Devices 17, 24/05/2015, p.295-301Publication Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
Proceedings paper2016, 31st Symposium on Microelectronics Technology and Devices - SBMicro, 29/08/2016Publication Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process
Journal article2016, Semiconductor Science and Technology, (31) 11, p.114002Publication Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
Journal article2008, Solid-State Electronics, (52) 11, p.1751-1754Publication Vertical nanowire TFET diameter influence on intrinsic voltage gain for different inversion conditions