Browsing by Author "Asenov, A."
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Publication Development of a technique for characterizing bias temperature unstability-induced device-to-device variation at SRAM-relevant conditions
Journal article2014, IEEE Transactions on Electron Devices, (61) 9, p.3081-3089Publication Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM
Publication Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs
Proceedings paper2012, International Reliability Physics Symposium - IRPS, 15/04/2012, p.5A-4Publication Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction
Publication Key issues and techniques for characterizing time-dependent device-to-device variation of SRAM
; ; Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.774-777Publication Monte Carlo simulation study of hole mobility in germanium MOS inversion layers
Proceedings paper2010, 14th International Workshop on Computational Electronics- IWCE, 26/10/2010, p.4 pp.Publication On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects
Proceedings paper2016, International Integrated Reliability Workshop - IIRW, 9/10/2016Publication TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology
Publication Time-dependent variation: A new defect-based prediction methodology
; ; ; Proceedings paper2014, IEEE VLSI Technology Symposium, 9/06/2014, p.1-2