Browsing by Author "Bakeroot, Benoit"
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Publication 1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Journal article2024, IEEE ELECTRON DEVICE LETTERS, (45) 4, p.657-660Publication 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
; ; ; ; ; Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021Publication A 16 channel high-voltage driver with 14 bit resolution for driving piezoelectric actuators
Journal article2015, IEEE Transactions on Circuits and Systems I Regular Papers, (62) 7, p.1726Publication A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination
Journal article2023, SOLID-STATE ELECTRONICS, (210) December, p.Art. 108778Publication A high-voltage switching ADSL line-driver, with an n-type output stage
Proceedings paper2008-07, Proceedings of the 12th WSEAS International Conference on CIRCUITS, p.60-64Publication A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling
Proceedings paper2007-01, 20th International Conference on VLSI Design, 6/01/2007, p.177-182Publication A new lateral-IGBT structure with a wider safe operating area
Journal article2007, IEEE Electron Device Letters, (28) 5, p.416-418Publication A new LIGBT structure to suppress substrate currents in a junction isolated technology
Journal article2005, Solid-State Electronics, (49) 3, p.363-367Publication A new substrate current free nLIGBT for junction isolated technologies
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.461-464Publication A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers
Proceedings paper2008-08, Proceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, p.954-957Publication AlON gate dielectric and gate trench cleaning for improved relia-bility of vertical GaN MOSFET
Proceedings paper2022, 12th International Conference on Integrated Power Electronics Systems - CIPS, 15th to 17th of March 2022Publication An experimental approach for bias-dependent drain series resistance evaluation in asymmetric HV MOSFETs
Proceedings paper2001, Proceedings of the 31st European Solid-State Device Research Conference, 11/09/2001, p.403-406Publication An ultrafast and latch-up free lateral IGBT with hole diverter for junction-isolated technologies
Proceedings paper2007-06, 19th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 27/05/2007, p.21-24Publication Analysis of a narrow-base laterel IGBT with double buried layer for junction-isolated smart-power technologies
Journal article2008, IEEE Transactions on Electron Devices, (55) 1, p.435-445Publication Analysis of inverter architectures in a GaN-IC technology
Proceedings paper2024, 11th Workshop on Wide Bandgap Power Devices and Applications, NOV 04-06, 2024Publication Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
Proceedings paper2024, International Reliability Physics Symposium (IRPS), APR 14-18, 2024Publication Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Journal article2015, Solid-State Electronics, 103, p.127-130Publication Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
Journal article2017, IEEE Electron Device Letters, (38) 12, p.1696-1699Publication Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
Journal article2018, IEEE Transactions on Electron Devices, (65) 1, p.79-86Publication Assessment of N-type and P-type doping in (Al,Ga)N heterostructures by Scanning probe microscopy techniques
Oral presentation2021, MRS Spring 2021