Browsing by Author "Baumgartner, O."
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Publication A comprehensive model for correlated drain and gate current fluctuations
Proceedings paper2013, 16th International Workshop on Computational Electronics - IWCE, 4/06/2013, p.46-47Publication A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics
;Schanovsky, F. ;Rzepa, G. ;Stanojevic, Z. ;Kernstock, C. ;Baumgartner, O.Karner, M.Proceedings paper2021, IEEE International Memory Workshop (IMW), MAY 16-19, 2021, p.64-67Publication Direct tunneling and gate current fluctuations
;Baumgartner, O. ;Bina, M. ;Goes, W. ;Schanovsky, F. ;Toledano Luque, Maria; Kosina, H.Proceedings paper2013, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 3/09/2013, p.17-20Publication Monolithic TCAD simulation of phase-change memory (PCM/PRAM) plus Ovonic Threshold Switch (OTS) selector device
;Thesberg, M. ;Stanojevic, Z. ;Baumgartner, O. ;Kernstock, C. ;Leonelli, D. ;Barci, M.Wang, X.Journal article2023, SOLID-STATE ELECTRONICS, (199) January, p.Art.: 108504Publication Multiphonon processes as the origin of reliability issues
Proceedings paper2013, Semiconductors, Dielectrics, and Materials for Nanoelectronics II, 27/10/2013, p.31-47Publication Quantum-mechanical modeling of NBTI in High-k SiGe MOSFETs
Proceedings paper2011, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 8/09/2011Publication Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies
;Rzepa, G. ;Karner, M. ;Baumgartner, O. ;Strof, G. ;Schanovsky, F. ;Mitterbauer, F.Kernstock, C.Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication Understanding correlated drain and gate current fluctuations
;Goes, W. ;Toledano Luque, Maria ;Baumgartner, O. ;Bina, M. ;Schanovsky, F.; Grasser, T.Proceedings paper2013, 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, 15/07/2013, p.51-56Publication Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling
Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021