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Browsing by Author "Baumgartner, O."

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    A comprehensive model for correlated drain and gate current fluctuations

    Goes, Wolfgang
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    Toledano Luque, Maria
    ;
    Baumgartner, O.
    ;
    Schanovsky, Frank
    ;
    Kaczer, Ben  
    Proceedings paper
    2013, 16th International Workshop on Computational Electronics - IWCE, 4/06/2013, p.46-47
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    A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics

    Schanovsky, F.
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    Rzepa, G.
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    Stanojevic, Z.
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    Kernstock, C.
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    Baumgartner, O.
    ;
    Karner, M.
    Proceedings paper
    2021, IEEE International Memory Workshop (IMW), MAY 16-19, 2021, p.64-67
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    Direct tunneling and gate current fluctuations

    Baumgartner, O.
    ;
    Bina, M.
    ;
    Goes, W.
    ;
    Schanovsky, F.
    ;
    Toledano Luque, Maria
    ;
    Kaczer, Ben  
    ;
    Kosina, H.
    Proceedings paper
    2013, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 3/09/2013, p.17-20
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    Monolithic TCAD simulation of phase-change memory (PCM/PRAM) plus Ovonic Threshold Switch (OTS) selector device

    Thesberg, M.
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    Stanojevic, Z.
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    Baumgartner, O.
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    Kernstock, C.
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    Leonelli, D.
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    Barci, M.
    ;
    Wang, X.
    Journal article
    2023, SOLID-STATE ELECTRONICS, (199) January, p.Art.: 108504
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    Multiphonon processes as the origin of reliability issues

    Goes, Wolfgang
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    Toledano Luque, Maria
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    Schanovsky, F.
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    Bina, M.
    ;
    Baumgartner, O.
    ;
    Kaczer, Ben  
    Proceedings paper
    2013, Semiconductors, Dielectrics, and Materials for Nanoelectronics II, 27/10/2013, p.31-47
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    Quantum-mechanical modeling of NBTI in High-k SiGe MOSFETs

    Hehenberger, Philipp
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    Goes, Wolfgang
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    Baumgartner, O.
    ;
    Franco, Jacopo  
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    Kaczer, Ben  
    Proceedings paper
    2011, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 8/09/2011
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    Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

    Rzepa, G.
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    Karner, M.
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    Baumgartner, O.
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    Strof, G.
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    Schanovsky, F.
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    Mitterbauer, F.
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    Kernstock, C.
    Proceedings paper
    2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021
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    Understanding correlated drain and gate current fluctuations

    Goes, W.
    ;
    Toledano Luque, Maria
    ;
    Baumgartner, O.
    ;
    Bina, M.
    ;
    Schanovsky, F.
    ;
    Kaczer, Ben  
    ;
    Grasser, T.
    Proceedings paper
    2013, 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, 15/07/2013, p.51-56
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    Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling

    Verreck, Devin  
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    Arreghini, Antonio  
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    Schanovsky, F.
    ;
    Rzepa, G.
    ;
    Stanojevic, Z.
    ;
    Mitterbauer, F.
    Proceedings paper
    2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021

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