imec Institutional Repository Browsing {{ collection }} by Author "Benbakhti, B."

Publication

AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction

Ma, J.

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Zhang, W.

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Zhang, J.F.

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Ji, Z.

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Benbakhti, B.

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Franco, Jacopo

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Mitard, Jerome

Proceedings paper

2015, IEEE Symposium on VLSI Technology, 15/06/2015, p.T34-T35

Publication

Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack

Benbakhti, B.

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Zhang, J.F.

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Li, Z.

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Zhang, W

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Mitard, Jerome

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Kaczer, Ben

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Groeseneken, Guido

Journal article

2012, IEEE Electron Device Letters, (33) 12, p.1681-1683

Publication

Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes

Barkad, H.A.

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Soltani, A.

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Mattalah, M.

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Gerbedoen, J.C.

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Rousseau, M.

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de Jaeger, J.C.

Journal article

2010, Journal of Physics D: Applied Physics, (43) 46, p.465104

Publication

Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

Ma, Jigang

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Chai, Zheng

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Zhang, Weidong

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Govoreanu, Bogdan

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Zhang, Jiang F.

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Ji, Z.

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Benbakhti, B.

Proceedings paper

2016, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.564-567

Publication

Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction

Meng, D.

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Zhang, J. F.

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Zhang, J. C.

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Zhang, W.

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Ji, Z.

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Benbakhti, B.

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Zheng, X. F.

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Hao, Y.

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Vigar, D.

Proceedings paper

2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.XT-5.1-XT-5.7

Publication

Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure

Ma, J

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Zhang, J.F.

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Ji, Z.

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Benbakhti, B.

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Duan, M.

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Zhang, W.

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Zheng, X.F.

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Mitard, Jerome

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Kaczer, Ben

Journal article

2013, Microelectronic Engineering, 109, p.43-45

Browsing by Author "Benbakhti, B."