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Browsing by Author "Benbakhti, Brahim"

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    A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

    Ma, Jigang
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    Zhang, Wei Dong
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    Zhang, Jian Fu
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    Benbakhti, Brahim
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    Li, Zhigang
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    Mitard, Jerome  
    Journal article
    2016, IEEE Transactions on Electron Devices, (63) 10, p.3830-3836
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    Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

    Ma, J.
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    Zhang, J.F.
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    Ji, Zhigang
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    Benbakhti, Brahim
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    Zhang, Wei Dong
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    Zheng, Xue Feng
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    Mitard, Jerome  
    Journal article
    2014, IEEE Transactions on Electron Devices, (61) 5, p.1307-1315
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    Design and analysis of a new In53Ga47As implant-free quantum-well device structure

    Benbakhti, Brahim
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    Kalna, Karol
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    Chan, KahHou
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    Asenov, Asen
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    Hellings, Geert  
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    Eneman, Geert  
    Meeting abstract
    2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials, 7/06/2010
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    Design and analysis of the In sub(0.53)Ga sub(0.47)As implant-free quantum-well device structure

    Benbakhti, Brahim
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    Kalna, Karol
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    Chan, KanHou
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    Towie, Ewan
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    Hellings, Geert  
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    Eneman, Geert  
    Journal article
    2011, Microelectronic Engineering, (88) 4, p.358-361
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    Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs

    Ma, J
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    Zhang, J. F.
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    Ji, Zhigang
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    Benbakhti, Brahim
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    Zhang, Wei
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    Mitard, Jerome  
    ;
    Kaczer, Ben  
    Journal article
    2014, IEEE Electron Device Letters, (35) 2, p.160-162
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    Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures

    Benbakhti, Brahim
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    Ayubi-Moak, J.S.
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    Kalna, Karol
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    Lin, Dennis  
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    Hellings, Geert  
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    Brammertz, Guy  
    Journal article
    2010, Microelectronics Reliability, (50) 3, p.360-364
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    Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

    Ma, Jigang
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    Chai, Zheng
    ;
    Zhang, Wei Dong
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    Zhang, J. F.
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    Ji, Z.
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    Benbakhti, Brahim
    ;
    Govoreanu, Bogdan  
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 3, p.970-977
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    Monte Carlo analysis of In0.53Ga0.47As implant-free quantum-well device performance

    Benbakhti, Brahim
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    Towie, E.
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    Kalna, Karol
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    Hellings, Geert  
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    Eneman, Geert  
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    De Meyer, Kristin  
    Proceedings paper
    2010, Silicon Nanoelectronics Workshop, 13/06/2010, p.17-18
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    Numerical analysis of the new implant-free quantum-well CMOS: dualLogic approach

    Benbakhti, Brahim
    ;
    Chan, KahHou
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    Towie, Ewan
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    Kalna, Karol
    ;
    Riddet, Craig
    ;
    Wang, Xingsheng
    Journal article
    2011, Solid-State Electronics, (63) 1, p.14-18
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    Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET

    Benbakhti, Brahim
    ;
    Martinez, Antonio
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    Kalna, Karol
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    Hellings, Geert  
    ;
    Eneman, Geert  
    Journal article
    2012, IEEE Transactions on Nanotechnology, (11) 4, p.808-817
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    The implant-free quantum well field-effect-transistor: Harnessing the power of heterostructures

    Hellings, Geert  
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    Hikavyy, Andriy  
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    Mitard, Jerome  
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    Witters, Liesbeth  
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    Benbakhti, Brahim
    Proceedings paper
    2011, 7th International Conference on Si Epitaxy and Heterostructures - ICSI-7, 29/08/2011
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    The implant-free quantum well field-effect-transistor: harnessing the power of heterostructures

    Hellings, Geert  
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    Hikavyy, Andriy  
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    Mitard, Jerome  
    ;
    Witters, Liesbeth  
    ;
    Benbakhti, Brahim
    Journal article
    2012, Thin Solid Films, (520) 8, p.3326-3331

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