Browsing by Author "Benbakhti, Brahim"
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Publication A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs
Journal article2016, IEEE Transactions on Electron Devices, (63) 10, p.3830-3836Publication Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
;Ma, J. ;Zhang, J.F. ;Ji, Zhigang ;Benbakhti, Brahim ;Zhang, Wei Dong ;Zheng, Xue FengJournal article2014, IEEE Transactions on Electron Devices, (61) 5, p.1307-1315Publication Design and analysis of a new In53Ga47As implant-free quantum-well device structure
Meeting abstract2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials, 7/06/2010Publication Design and analysis of the In sub(0.53)Ga sub(0.47)As implant-free quantum-well device structure
Journal article2011, Microelectronic Engineering, (88) 4, p.358-361Publication Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs
Journal article2014, IEEE Electron Device Letters, (35) 2, p.160-162Publication Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures
Journal article2010, Microelectronics Reliability, (50) 3, p.360-364Publication Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution
;Ma, Jigang ;Chai, Zheng ;Zhang, Wei Dong ;Zhang, J. F. ;Ji, Z. ;Benbakhti, BrahimJournal article2018, IEEE Transactions on Electron Devices, (65) 3, p.970-977Publication Monte Carlo analysis of In0.53Ga0.47As implant-free quantum-well device performance
Proceedings paper2010, Silicon Nanoelectronics Workshop, 13/06/2010, p.17-18Publication Numerical analysis of the new implant-free quantum-well CMOS: dualLogic approach
;Benbakhti, Brahim ;Chan, KahHou ;Towie, Ewan ;Kalna, Karol ;Riddet, CraigWang, XingshengJournal article2011, Solid-State Electronics, (63) 1, p.14-18Publication Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
Journal article2012, IEEE Transactions on Nanotechnology, (11) 4, p.808-817Publication The implant-free quantum well field-effect-transistor: Harnessing the power of heterostructures
Proceedings paper2011, 7th International Conference on Si Epitaxy and Heterostructures - ICSI-7, 29/08/2011Publication The implant-free quantum well field-effect-transistor: harnessing the power of heterostructures
Journal article2012, Thin Solid Films, (520) 8, p.3326-3331