Browsing by Author "Bennett, J."

Now showing 1 - 6 of 6

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Young, C.D.
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Kerber, Andreas
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Hou, T.H.
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Cartier, Eduard
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Brown, G.A.
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Bersuker, G.
;
Kim, Y.
;
Lim, C.
Proceedings paper
2004, Physics and Technology of High-k Gate Dielectrics II, 12/10/2003, p.347-359
Charge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Young, C.D.
;
Kerber, Andreas
;
Hou, T.H.
;
Cartier, E.
;
Brown, G.A.
;
Bersuker, G.
;
Kim, Y.
;
Lim, C.
Meeting abstract
2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 12/10/2003
On the reliability of SIMS depth profiles through HfO2-stacks

Vandervorst, Wilfried
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Bennett, J.
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Huyghebaert, Cedric
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Conard, Thierry
;
Gondran, C.
Journal article
2004, Applied Surface Science, 231-232, p.569-573
Progress towards an electrically active, ultra-shallow junction depth reference for carrier illumination, SRP and SIMS

Borden, P.
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Bechtler, L.
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Klemme, B.
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Nijmeijer, R.
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Judge, E.
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Diebold, A.
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Bennett, J.
Proceedings paper
2001, 6th Int. Workshop on Fabrication, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - USJ, 22/04/2001, p.161-167
Sputter rate variations in silicon under high-k dielectric films

Bennett, J.
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Beebe, M.
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Sparks, C.
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Gondran, C.
;
Vandervorst, Wilfried
Journal article
2004, Applied Surface Science, 231-232, p.565-568
Sputter rate variations in silicon under high-k dielectric films

Bennett, J.
;
Beebe, M.
;
Sparks, C.
;
Gondran, C.
;
Vandervorst, Wilfried
Proceedings paper
2004-05, Proceedings of the Fourteenth Int. Conference on Secondary Ion Mass Spectrometry and Related Topics, 14/09/2003, p.565-568